Electrolytic transistor with collector in base-emitter current path

ABSTRACT

An improved self-healing electrolytic transistor using electrode materials and solutions similar to those used in electrolytic capacitors; in which; the collector is placed within the emitter to base current path; also having means for varying the internal input resistance; and which is capable of high power output.

United States Patent I Tami, Jr;

[54] ELECTROLYTIC TRANSISTOR WITI-I COLLECTOR IN BASE-EMITTER CURRENT PATH [72] lnventor: Joseph Tami, J 7725 Apperson Street, Tujunga, if. 91042 [22] Filed: Feb. 11, 1971 211 ApplQ N01; 114,627

521 user .;.317/23o,317/23s,317/237 s11 1nt.Cl. ..I-I01g9/00 [58] Field oiSearch ..317/230,231

[56] 1 References Cited I UNITED STATES PATENTS 1 ,877,140 9/1932 "LilienfeldQ ..317/23'1x 451 Oct. 31, 1972 6/1935 V Geeletal ..317/230 2,283,723 5/1942 Cl ..3l7/230 2,558,172 6/1951 Clark ..3l7/230 2,685,025 7/1954 Ro ..3 17/231 3,017,548 1/1962 De (1 et a1 ..317/23l 3,051 ,876 8/1962 Bardeen 1 7/231 Primary Examiner-James D. Kallam I [57] ABSTRACT An improved self-healingelectrolytic transistor using electrode materials and solutions similar to th used in electrolytic capacitors; in which; the col or is tter placed within the emi to base current path; also having means for varying the internal input resistance; and which is capable of high power output.

5 Claims, 1 Drawing Figure pared to the the 2. To secure a greater power amplifying ability than present solid state devices in the art.

I 3. To achieve a better manufacturing control of electrical characteristics than the transistors in use at the present time.

, 4.To achieve a lower cost of production than the present types of semi conductor devices.

' This device is an electrolytic transistor with three (or more) electrodes in contact with an electrolytic solution and whichcan be used to amplify DC and AC currents of various magnitudes and frequencies depending on the material, size and spacing of the electrodes;-the composition and quantity of the electrolyte; and the formation voltage of the film on the surface of the emitter andcollector.

Except for necessary changes in operating voltages and the electrical values of some components it can be leak proof bond results.

used in circuits identical to those used with many transistors. The major difference between this electrolytic transistor. and other electrolytic transistor devices is the means used for controlling the collector current and varying its input resistance.

Instead, of causing the control current to flow along the side of the collector the-control electrode is placed in such aposition asto cause the control current to flow through passages in the collector electrode, thus resulting in a greatertransfer current from the emitter to the collector. Sincethe base, or control electrode, is mounted on the side of the collector opposite to the emitter there is a greater resistance to the flow of emitter to base current thus resulting in a greater emitter base input resistance which is an advantage when this device is, connected to circuits where less loading is desired.

A specific embodiment of this device as power amplifier transistor is as follows:

Referring to the diagram: 1 Item I, the emitter, is a circular disc of aluminum four inches in diameter by one-half inch thick. The surface of this emitter electrode is coated with a film of aluminum oxide (A1 05) preformed in a solution of percent boric acid (I-I,BO,) by weight and 90 percent distilled water (E 0) by weight and preforrned'by the application of a DC voltage (positive polarity on electrode, negative polarity on solution) gradually increased up to 50 volts. A hole one-eighth inch in diameter is drilled at .the center of the. disc and perpendicular to the surface of the emitter electrode for the purpose of injectingthe electrolyte after assembly of this device.

External emitter connection, item 7, made by means of a 14 gauge copper wire fastened to the edge of the disc.

Item 2, the collector, is the same as item 1' except that, prior to the preformation process, twenty one-sixteenth inch holes are drilled equally spaced in a circle 1 inch in radius from the center of the-disc and perpendicular to its surface.

' No filling hole is needed. All surfaces of the collector are preformed in the same manner as the emitter exdesired on the base electrode.'External base" connection, item 9, is made in the same manner as item 7.

Items 4 and 5 are identical insulating spacers consisting of rubber rings one-fourth inch thick and with an inside diameter of 3 inches and an outside diameter of 4 inches.

All items are assembled in the order'indicated in the diagram. The rubber washers are cementedto the adjacent electrodes by metal cement. r r

The assembly is then clamped in a vise until a strong After the cement has hardened; the cavities, item 6, in the device are filled with the same solution as was used during preformation. (Allowance must be made for expansion of the liquid during operation Then the two filling holes are filled with rubber cement to prevent leakage of the electrolyte.

A DC voltage of 50 volts is applied between emitter and base(in order to again preform the oxide film on the emitter) with the positive potential on the emitter; and then a voltage'of 500 volts is applied between the collector and the base with the positive potential on the collector.

Thick electrodes and a large quantity of electrolyte are used in order to maintain a lower temperature in this power device.

"While this specific embodiment is intended for use in an audio amplifier it may be constructed for low power or high frequency use by using components of smaller dimensions and the use of otherelectrolytes that form thicker oxide films, (such as, oxalic, sulphuric, and

chromic acids and their salts). This results in a reduction incapacitance between the electrodes and increases the cut off frequency of the device.

OPERATION OF THE DEVICE lector to emitter and from collector to base (reversed bias), and a very much lower resistance from emitter to base (forward bias). The base electrode has no film on it and the voltage'applied between the base (positive) and the emitter (negative) is kept below the point at which a film will form on the base (2 volts). If a higher input voltage is desired the base may be plated with a material resistive to oxidization such as gold, chromium etc. i

The solution-.(lopercent boricacid and percent distilled water) is used as a'means for applying the voltmeans of a waterproof rubber-t0 ages to the electrodes (internally); to provide a con- 7 ductive path for the current from the emitter through greater variation in the emitter-collector current in the collector-emitter (.IT) circuit. By decreasing the diameter of the holes in the collector and/or by increasing the thickness of the film on the collector (by applying higher voltages during formation of the film or during operation of this device) the restriction to the flow of emitter base current through the solution will be increased, resulting ina higher input resistance between the emitter and base and also a greater effect of the emitter-base current on the emitter-collector current. This device may be used in circuits similar to NPN transistor circuits and may be used as a substitute for an NPN transistor provided proper operating voltages are applied.

It is particularily adapted for use as an audio power output electrolytic transistor.

The collector film may be preformed up to a voltage of 800 volts and this device may be operated with maximum surge voltages near that amount. An advantage of this transistor over the semiconductor type is that this transistor is self healing when overloads or transient surges occur; due to the reforming qualities of the film on the electrodes.

Another advantage of this device is that, due to the cooling effect of the electrolyte, it has an increased heat dissipating ability.

' DESCRIPTION OF DRAWING While this drawing shows the use of circular rings and discs, the transistor can be manufactured in various configuration (such as rectangular or tubular). The FIGURE is a cross sectional view of the electrolytic transistor:

l. Emitter, consisting of an electrically conductive disc coated (on its internal surface) by a material offering non linear electrical current conduction. This film may be formed by electrical, chemical, heat process.

2. All surfaces, external and internal, are coated with a film having nonlinear electrical conduction properties. This-film may be formed chemically, electrically, or by heat process.

3. Base, consisting of an electrically conductive disc. No film is necessary.

4. Insulating ring used as separator between collector and base.

5. Insulating ring used as separator between collector and base.

6. Liquid or paste electrolyte between emitter, collector, and base, and in the holes prefabricated in the collector. r

7. Emitter connection.

8. Collector connection.

9. Base connection.

I claim: I

1. An electrolytic transistor comprising three electric conduc 've electr es s a e from ach other llll the side e ectrodes f rming tfie base and emitter of the transistor and the central electrode the collector thereof, electrically insulating gasket-like members having central openings therein interleaved and sealed between the electrodes and together with the electrodes forming a pair of electrolyte containing spaces between the electrodes, the emitter and collector of said electrodes being composed of film-forming metal and the collector having passages therethrough interconnecting said spaces, a film-forming electrolyte contained in said spaces and extending through the passages in the collector electrode, said emitter and collector electrodes having conduction films on the surfaces thereof contacting the electrolyte, said films being non linear in conduction of electrical current as to direction from said electrolyte to electrode in comparison to electrical current from electrode to electrolyte.

2. An electrolytic transistor as recited in claim 1 wherein said collector and emitter electrodes are aluminum.

3. An electrolytic transistor as recited in claim 1 wherein said electrolyte is a liquid solution.

4. An electrolytic transistor as recited in claim I wherein said base electrode is nonfilm-forming in said transistor.

5. An electrolytic transistor as recited in claim 1 wherein said electrodes have terminals for electrical connections thereto. 

2. An electrolytic transistor as recited in claim 1 wherein said collector and emitter electrodes are aluminum.
 3. An electrolytic transistor as recited in claim 1 wherein said electrolyte is a liquid solution.
 4. An electrolytic transistor as recited in claim 1 wherein said base electrode is nonfilm-forming in said transistor.
 5. An electrolytic transistor as recited in claim 1 wherein said electrodes have terminals for electrical connections thereto. 